Symmetric rate model for fluorocarbon plasma etching of SiO2
نویسندگان
چکیده
منابع مشابه
Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
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Plasma-surface interactions during plasma etching are important in that, in addition to determining the rate and quality of the etch, they can also influence the properties of the bulk plasma. To address this coupling of bulk and surface processes the surface kinetics model ~SKM! was developed as a module in the two-dimensional hybrid plasma equipment model ~HPEM! with the goal of combining pla...
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The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase ch...
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Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions’ anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of t...
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We present and discuss results obtained in studies of the mechanisms underlying various feature size dependencies of SiO2 etching in inductively coupled fluorocarbon plasmas. The variation of the fluorocarbon deposition rate and the SiO2 etch rate with both feature size and rf bias power has been measured in a variety of constant aspect ratio features for both an etch stop (C3F6 /H2) and a none...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.115670